amplifiers and high energy pulse circuits. Part Number. IRF IRF N.I Semi-Conductors encourages customers to verify that datasheets are current. IRF datasheet, IRF pdf, IRF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, A, V, Ohm, N-Channel Power MOSFET. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power.
|Published (Last):||20 November 2007|
|PDF File Size:||3.88 Mb|
|ePub File Size:||16.47 Mb|
|Price:||Free* [*Free Regsitration Required]|
IRF Datasheet pdf – A, V, Ohm, N-Channel Power MOSFET – Fairchild Semiconductor
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Please note that some Vishay documentation may still make reference to the IEC definition.
C, Dec 0 10 5 Ciss Fig. To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Gate-to-Source Voltage Document Number: Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Products may be manufactured at one of several qualified locations.
IRF Datasheet(PDF) – International Rectifier
Such statements are not binding statements about the suitability of products for a particular application. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
For example, parts datashfet lead Pb terminations are not RoHS-compliant. C, Dec Document Number: Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Repetitive rating; pulse width limited by maximum junction temperature see fig. The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry.
Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
Product names and markings noted herein may be trademarks of their respective owners.