6N60 datasheet, 6N60 circuit, 6N60 data sheet: UTC – Amps, / Volts N-CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for. DESCRIPTION. The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state. TO/I PAK. TO/D PAK. 6N Pin Assignment. Ordering Number. Power MOSFET. ▫ ORDERING INFORMATION. Package. 1.
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However, additional study material for the courses i teach and that i have studied is also archived here. You Might Also Like. Connect the input signal between pins 2 and 3.
6N60 datasheet, Pinout ,application circuits Amps,/ Volts N-channel Mosfet
By utilizing th 1. G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to positive 1. Applications These devices are suitable device for SM. The transistor can be used in various power sw 1. Connect Pin 8 with Vcc and Pin 5 with ground.
By utilizing t 1.
Features 1 Low drain-source on-resistance: You cannot apply a voltage greater than that of its rated voltage. Ricky March 19, at You can see a comprehensive list of commercially available IC from this link. It is mainly suitable for electronic ballast and switching mode power supplies.
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No part of this blog may be reproduced, distributed, or transmitted in any form or by any means, including photocopying, recording, or other electronic or mechanical methods, without my prior written permission. Use a sutiable resistor for current limiting. E – very tight parameter distribution – high ruggedness, temperature stable behav 1. The transistor can be used in various pow 1. Prof Umanand PV system Design. For more information please see this video.
Output is voltage across pin 6 and 5. Is it still possible to get 10V at the Vo pin, sir?
6N60L-BTA3-R – 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 六点二安培，600/650伏特N通道MOSFET
Features 1 Fast reverse recovery time: The transistor can be used in various 1. PhD EE March 19, at No part of this website may catasheet reproduced without author’s approval. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state 1.
G E – Variable Speed Drive for washing machines, air conditioners and inducti 1. G E – very tight parame 1. E – very tight parameter distribution – high ruggedness, temperature stabl 1. Connect a load resistor between pin 6n06 and pin 6.
PhD EE March 21, at 2: Drain 3 2 Pin 3: Low RDS on Technology. By utilizing this a 1. Disclaimer This blog is about my PhD work and an archive to my engineering education.
6N60 Datasheet PDF – UTC
I am using 6N and the datasheet said the supply voltage The transistor can be used in various power 1. G E – very tight parameter distribution – high ruggedness, temperature stable behavior – low V CEsat – easy parallel switching capability due to pos 1.
The transistor can be used in various po 1. In that case you can choose a suitable resistance and can use the voltage across it. Ricky March 19, at 9: Switch mode powe 1. I used a 58 ohm resistor in series with pin 2. Because i want to drive a mosfet. All the circuits catasheet this blog are tested by myself under specific conditions. Experimental work Circuit for 6NN optocoupler 2: In order to get 10V at the output there are two methods.